NPN Silicon AF Transistors
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
Complementary types: BCP51M...BCP53M(PNP)
BCP54M...BCP56M
4
5
3
2
1
VPW05980
Type
BCP54M
BCP55M
BCP56M
Marking
BAs
BEs
BHs
1=B
1=B
1=B
Pin Configuration
2 = C 3 = E 4 n.c.
2 = C 3 = E 4 n.c.
2 = C 3 = E 4 n.c.
5=C
5=C
5=C
Package
SCT595
SCT595
SCT595
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS 77 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point1)
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
BCP54M BCP55M BCP56M Unit
45
60
80 V
45
60
100
5
5
5
1
A
1.5
100
mA
200
1.7
W
150
°C
-65 ... 150
RthJS
43
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
1
Nov-29-2001