DS60RU 查看數據表（PDF） - Maxim Integrated
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DS60RU Datasheet PDF : 2 Pages
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DS60
output that is capable of sourcing 125µA, which allows the DS60 to be switched to a zero power standby
state when the gate is forced to a logic 0.
ABSOLUTE MAXIMUM RATINGS*
Voltage on VDD
Output Current
Operating Temperature Range
Storage Temperature Range
ESD Susceptibility (Human Body Model)
Soldering Temperature
220°C for 15s (IR)
GND -0.3V to +6.5V
5.0mA
-40°C to +125°C
-55°C to +150°C
2kV
215°C for 60s (Vapor Phase)
* These are stress ratings only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied.Exposure to absolute
maximum rating conditions for extended periods of time may affect reliability.
The Dallas Semiconductor DS60 is built to the highest quality standards and manufactured for long-term
reliability. All Dallas Semiconductor devices are made using the same quality materials and
manufacturing methods. However, the DS60 is not exposed to environmental stresses, such as burn-in,
that some industrial applications require.
DC ELECTRICAL CHARACTERISTICS (-40°C to +125°C; 2.7V £ VDD £ 5.5V)
PARAMETER SYMBOL CONDITION MIN TYP MAX UNITS NOTES
Supply Voltage
VDD
2.7
5.5
V
1
Supply Current
IDD
80 125 µA
2
Measurement
Error
TERR
0°C £ TA £ 85°C
-40°C £ TA £ 125°C
±2
°C
2
±3
VO DC Offset
T = 0°C
424
mV
1, 2
Sensor Gain
DV/DT
6.0 6.25 6.5 mV/°C
2
Nonlinearity
±0.8 °C
2, 3
Power Supply
Regulation
Sensor Drift
Output Impedance
2.7V £ VDD £ 3.3V
3.0V £ VDD £ 5.5V
±2.0 mV/V
±0.25 mV/V
±0.25
°C
4
800
W
NOTES:
1) All voltages are referenced to ground unless otherwise specified.
1. 2) Specified for VO sourcing 1.0µA (max).
3) Nonlinearity is the maximum deviation from an ideal linear slope.
4) Typical drift following three consecutive passes through a vapor phase process.
2 of 2
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