IRF614 查看數據表（PDF） - Inchange Semiconductor

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IRF614

N-Channel Mosfet Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc N-Channel Mosfet Transistor

isc Product Specification

IRF614

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)DSS Drain-Source Breakdown Voltage

VGS= 0; ID= 0.25mA

VGS(th) Gate Threshold Voltage

RDS(on) Drain-Source On-Resistance

IGSS

Gate-Body Leakage Current

VDS= VGS; ID= 0.25mA

VGS= 10V; ID= 1.5A

VGS= ±20V;VDS= 0

IDSS

Zero Gate Voltage Drain Current

VDS= 250V; VGS=0

VSD

Forward On-Voltage

IS= 2A; VGS=0

MIN MAX UNIT

250

V

2

4

V

2

Ω

±500

nA

250

uA

2.0

V

isc website：www.iscsemi.cn

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