QM75E3Y-H 查看數據表（PDF） - MITSUBISHI ELECTRIC

零件编号

产品描述 (功能)

比赛名单

QM75E3Y-H

HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI ELECTRIC  

MITSUBISHI TRANSISTOR MODULES

QM75E2Y/E3Y-H

HIGH POWER SWITCHING USE

INSULATED TYPE

ABSOLUTE MAXIMUM RATINGS (Transistor part including D1, Tj=25°C)

Symbol

VCEX (SUS)

VCEX

VCBO

VEBO

IC

–IC

PC

IB

–ICSM

Parameter

Collector-emitter voltage

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Collector reverse current

Collector dissipation

Base current

Surge collector reverse current

(forward diode current)

Conditions

IC=1A, VEB=2V

VEB=2V

Emitter open

Collector open

DC

DC (forward diode current)

TC=25°C

DC

Peak value of one cycle of 60Hz (half wave)

Ratings

Unit

600

V

600

V

600

V

7

V

75

A

75

A

350

W

4.5

A

750

A

ABSOLUTE MAXIMUM RATINGS (Diode part (D2), Tj=25°C)

Symbol

VRRM

VRSM

VR (DC)

IDC

IFSM

I2t

Parameter

Repetitive peak reverse voltage

Non-repetitive peak reverse voltage

DC reverse voltage

DC current

Surge (non-repetitive) forward current

I2t for fusing

Conditions

DC circuit, resistive, inductive load

Peak value of one cycle of 60Hz (half wave)

Value for one cycle of surge current

ABSOLUTE MAXIMUM RATINGS (Common)

Symbol

Tj

Tstg

Viso

Parameter

Junction temperature

Storage temperature

Isolation voltage

Conditions

Charged part to case, AC for 1 minute

—

Mounting torque

Main terminal screw M5

Mounting screw M6

—

Weight

Typical value

ELECTRICAL CHARACTERISTICS (Transistor part including D1, Tj=25°C)

Symbol

Parameter

Test conditions

ICEX

ICBO

IEBO

VCE (sat)

VBE (sat)

–VCEO

hFE

ton

ts

tf

Rth (j-c) Q

Rth (j-c) R

Rth (c-f)

Collector cutoff current

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-emitter reverse voltage

DC current gain

VCE=600V, VEB=2V

VCB=600V, Emitter open

VEB=7V

IC=75A, IB=1A

–IC=75A (diode forward voltage)

IC=75A, VCE=2V/5V

Switching time

VCC=300V, IC=75A, IB1=–IB2=1.5A

Thermal resistance

(junction to case)

Contact thermal resistance

(case to fin)

Transistor part

Diode part

Conductive grease applied

Ratings

Unit

600

V

720

V

480

V

75

A

1500

A

9.45 × 103

A2s

Ratings

–40~150

–40~125

2500

1.47~1.96

15~20

1.96~2.94

20~30

210

Unit

°C

°C

V

N·m

kg·cm

N·m

kg·cm

g

Min.

—

—

—

—

—

—

75/100

—

—

—

—

—

Limits

Typ.

—

—

—

—

—

—

—

—

—

—

—

—

Max.

1.0

1.0

200

2.0

2.5

1.85

—

2.5

12

3.0

0.35

1.3

—

—

0.15

Unit

mA

mA

mA

V

V

V

—

µs

µs

µs

°C/ W

°C/ W

°C/ W

Feb.1999

Share Link: