QM75E2Y-H 查看數據表（PDF） - MITSUBISHI ELECTRIC
零件编号
产品描述 (功能)
比赛名单
QM75E2Y-H Datasheet PDF : 6 Pages
| |||
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-H
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (Diode part (D2), Tj=25°C)
Symbol
Parameter
IRRM
VFM
trr
Qrr
Rth (j-c)
Rth (c-f)
Repetitive peak reverse current
Forward voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
Test conditions
VR=VRRM, Tj=150°C
IF=75A
IF=75A, di/dt=–150A/µs, VR=300V, Tj=150°C
Junction to case
Conductive grease applied (case to fin)
Min.
—
—
—
—
—
—
Limits
Typ.
—
—
—
—
—
—
Max.
1.0
1.5
0.9
30
0.6
0.15
Unit
mA
V
µs
µC
°C/ W
°C/ W
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
200
160
IB=1.5A
IB=2.0A
120
IB=1.0A
80
IB=0.5A
40
Tj=25°C
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE VCE (V)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
10 1
7
5
4
3
2
10 0
7
5
4
3
2
VCE=2.0V
Tj=25°C
10 –1
1.0 1.4 1.8 2.2 2.6 3.0
BASE-EMITTER VOLTAGE VBE (V)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
2
10 3
VCE=5.0V
7
5
4
3
2
VCE=2.0V
10 2
7
5
4
3
2
10 0
Tj=25°C
Tj=125°C
2 3 4 5 7 101
2 3 4 5 7 102
COLLECTOR CURRENT IC (A)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
10 1
7
5
4
3
2
VBE(sat)
10 0
7
5
4
3
2
10 –1
10 1
VCE(sat)
IB=1A
Tj=25°C
Tj=125°C
2 3 4 5 7 102 2 3 4 5 7 103
COLLECTOR CURRENT IC (A)
Feb.1999
Share Link: 