SML10L100 查看數據表（PDF） - Semelab - > TT Electronics plc

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SML10L100

N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Semelab - > TT Electronics plc  

SML10L100

TO–264AA Package Outline.

Dimensions in mm (inches)

1.80 (0.071)

2.01 (0.079)

4.60 (0.181)

5.21 (0.205)

19.51 (0.768)

26.49 (0.807)

3.10 (0.122)

3.48 (0.137)

N–CHANNEL

ENHANCEMENT MODE

HIGH VOLTAGE

POWER MOSFETS

123

2.29 (0.090)

2.69 (0.106)

2.79 (0.110)

3.18 (0.125)

VDSS

ID(cont)

RDS(on)

100V

100A

0.011W

0.48 (0.019)

0.84 (0.033)

2.59 (0.102)

3.00 (0.118)

0.76 (0.030)

1.30 (0.051)

5.45 (0.215) BSC

2 plcs.

Pin 1 – Gate

Pin 2 – Drain

Pin 3 – Source

• Faster Switching

• Lower Leakage

• 100% Avalanche Tested

• Popular TO–264 Package

D

G

S

StarMOS is a new generation of high voltage

N–Channel enhancement mode power MOSFETs.

This new technology minimises the JFET effect,

increases packing density and reduces the

on-resistance. StarMOS also achieves faster

switching speeds through optimised gate layout.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

VDSS

Drain – Source Voltage

ID

Continuous Drain Current

IDM

Pulsed Drain Current 1

VGS

Gate – Source Voltage

VGSM

Gate – Source Voltage Transient

PD

Total Power Dissipation @ Tcase = 25°C

Derate Linearly

TJ , TSTG

TL

IAR

EAR

EAS

Operating and Storage Junction Temperature Range

Lead Temperature : 0.063” from Case for 10 Sec.

Avalanche Current1 (Repetitive and Non-Repetitive)

Repetitive Avalanche Energy 1

Single Pulse Avalanche Energy 2

1) Repetitive Rating: Pulse Width limited by maximum junction temperature.

W 2) Starting TJ = 25°C, L = 500µH, RG = 25 , Peak IL = 100A

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

100

100

400

±30

±40

520

4.16

–55 to 150

300

100

50

2500

V

A

A

V

W

W/°C

°C

A

mJ

6/99

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