PVB42004X 查看數據表（PDF） - Philips Electronics
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PVB42004X Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN microwave power transistor
Product specification
PVB42004X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VCES
VEBO
IC
Ptot
Tstg
Tj
Tsld
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
storage temperature
operating junction temperature
soldering temperature
open emitter
open base
RBE = 0 Ω
open collector
Tmb = 75 °C
at 0.1 mm from the case;
t ≤ 10 s
MIN.
−
−
−
−
−
−
−65
−
−
MAX.
40
15
40
3
1
18
+200
200
235
UNIT
V
V
V
V
A
W
°C
°C
°C
handbook,2h5alfpage
Ptot
(W)
20
MGD967
15
(1)
(2)
10
5
0
−50
0
50
100
150
200
Tmb (°C)
VCE = 24 V; f > 1 MHz.
(1) VSWR ≥ 5.
(2) VSWR < 3.
Fig.2 Power derating curves as functions of
mounting base temperature.
1997 Feb 19
3
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