3SK264 查看數據表（PDF） - ON Semiconductor
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3SK264 Datasheet PDF : 4 Pages
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Ordering number : EN4901B
3SK264
N-Channnel Dual Gate MOSFET
15V,30mA,PG=23dB,NF=1.1dB, CP4
http://onsemi.com
Features
• Enhancement type
• Easy AGC (Cut off at VG2S=0V)
• Small noise figure
• Excels in cross modulation characteristics
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate1-to-Source Voltage
Gate2-to-Source Voltage
Drain Current
Allowable Power Dissipation
Channel Temperature
Storage Temperature
VDS
VG1S
VG2S
ID
PD
Tch
Tstg
Conditions
Ratings
Unit
15
V
±8
V
±8
V
30 mA
200 mW
125
°C
--55 to +125
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
unit : mm (typ)
7014A-006
2.9
0.4
4
3
3SK264-5-TG-E
0.1
Product & Package Information
• Package
: CP4
• JEITA, JEDEC
: SC-61, SC-82AB, SOT-143, SOT-343
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TG Marking
1
2
0.6
0.95 0.85
1 : Drain
2 : Source
3 : Gate1
4 : Gate2
CP4
SJ
TG
Electrical Connection
1
3
4
2
Semiconductor Components Industries, LLC, 2014
June, 2014
61014HK TA-4315/90512TKIM/82599TH(KT)/32295TS(KOTO) No.4901-1/4
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