M40Z111MH6 查看數據表（PDF） - STMicroelectronics

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M40Z111MH6

5V OR 3V NVRAM SUPERVISOR FOR UP TO TWO LPSRAMs

STMicroelectronics 

M40Z111, M40Z111W

Table 5. DC Characteristics

Sym

Parameter

Test

Condition(1)

M40Z111

Min Typ

Max

M40Z111W

Unit

Min Typ

Max

ICC Supply Current

Outputs open

3

6

2

4

mA

ICCDR

Data Retention Mode

Current

150

150

nA

ILI Input Leakage Current

0V ≤ VIN ≤ VCC

±1

±1

µA

ILO(2) Output Leakage Current 0V ≤ VOUT ≤ VCC

±1

±1

µA

VOUT > VCC –0.3

160

IOUT1 VOUT Current (Active)

VOUT > VCC –0.2

100

100

mA

65

mA

IOUT2

VOUT Current (Battery

Back-up)

VOUT > VBAT –0.3

100

100

µA

VBAT Battery Voltage

VIH Input High Voltage

2.0 3.0

3.5

2.0 3.0

3.5

V

2.2

VCC + 0.3 2.0

VCC + 0.3 V

VIL Input Low Voltage

–0.3

0.8

–0.3

0.8

V

VOH Output High Voltage

IOH = –2.0mA 2.4

2.4

V

VOHB VOH Battery Back-up

IOUT2 = –1.0µA 2.0 2.9

3.6

2.0 2.9

3.6

V

VOL Output Low Voltage

IOL = 4.0mA

0.4

0.4

V

THS Threshold Select Voltage

VPFD

Power-fail Deselect

Voltage (THS = VSS)

Power-fail Deselect

Voltage (THS = VOUT)

VSS

VOUT

VSS

VOUT

V

4.50 4.60

4.75 2.80 2.90

3.00

V

4.20 4.35

4.50 2.50 2.60

2.70

V

VSO

Battery Back-up

Switchover Voltage

3.0

VPFD –

100mV

V

Note: 1. Valid for Ambient Operating Temperature: TA = –40 to 85°C; VCC = 4.5 to 5.5V or 2.7 to 3.6V (except where noted).

2. Outputs deselected.

6/15

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