1N6836 查看數據表（PDF） - getedz electronics
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1N6836 Datasheet PDF : 2 Pages
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1N6836
1.0A 2.0kV 30nS
Ultra-Fast Recovery High Voltage Silicon Rectifying Diode
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Introduce:
Reference Shape:
HVGT high voltage silicon rectifier diodes is made of
high quality glass passivated chip and high reliability
epoxy resin sealing structure, and through
professional testing equipment inspection qualified
after to customers.
Features:
High reliability design.
GPP chip.
High frequency, super fast recovery.
Conform to RoHS and SGS.
Epoxy resin molded in vacuumHave anticorrosion in
the surface.
Applications:
HVGT Name:
Unit: (mm)
High voltage multiplier circuit.
DO-590
X-ray power supply.
Lead Diameter 1.28±0.03
General purpose high voltage rectifier.
Other.
Mechanical Data:
Case: epoxy resin molding.
Terminal: welding axis.
29.0
9.0
Net weight: 2.1 grams (approx).
(min)
(±0.5)
Maximum Ratings And Characteristics: (Absolute Maximum Ratings)
29.0
(min)
5.0
(±0.2)
Items
Symbols
Condition
Data Value Units
Repetitive Peak Renerse Voltage
VRRM
TA=25°C
2.0
kV
Average Forward Current Maximum
IFAVM
TL=55°C (L=0.375’’)
TL=100°C (L=0.375’’)
1.0
A
750
mA
Non-Repetitive Forward Surge Current
IFSM
TA=25°C; 60Hz Half-Sine Wave; 8.3mS
40
A
Repetitive Forward Surge Current
IFRM
TA=25°C
5.0
A
Junction Temperature
TJ
150
°C
Allowable Operation Case Temperature
Tc
-55~+150
°C
Storage Temperature
TSTG
-55~+175
°C
Electrical Characteristics: TA=25°C (Unless Otherwise Specified)
Items
Symbols
Condition
Data value Units
Maximum Forward Voltage Drop
Maximum Reverse Current
Maximum Reverse Recovery Time
Junction Capacitance
VFM
at 25°C; at IFAVM
4.8
V
IR1
at 25°C; at VRRM
1.0
uA
IR2
at 100°C; at VRRM
25
uA
TRR
at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR
30
nS
CJ
at 25°C; VR=50VDC; f=1KHz
20
pF
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 Mar-21 1 / 2
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