CEP75N06G 查看數據表（PDF） - Unspecified
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CEP75N06G Datasheet PDF : 5 Pages
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Description：
This N-Channel MOSFET uses advanced trench technology and
design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.
CEP75N06G
Features：
1) VDS=60V,ID=45A,RDS(ON)<15mΩ@VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.
GDS
Absolute Maximum Ratings：(TC=25℃ unless otherwise noted)
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current-TC=25℃
Continuous Drain Current-TC=100℃
Pulsed Drain Current1
Single Pulse Avalanche Energy2
Power Dissipation(TC=25℃)
Operating and Storage Junction Temperature Range
Ratings
60
±25
45
32
180
182
68
-55 to +175
Thermal Characteristics：
Symbol
Parameter
Max
RƟJC
Thermal Resistance,Junction to Case
2.2
Units
V
V
A
mJ
W
℃
Units
℃/W
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