BTC4505N3 查看數據表（PDF） - Cystech Electonics Corp.
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BTC4505N3 Datasheet PDF : 4 Pages
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CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
BTC4505N3
Features
• High breakdown voltage. (BVCEO =400V)
• Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=10mA/1mA.
• Complementary to BTA1759N3
Spec. No. : C210N3
Issued Date : 2003.05.09
Revised Date : 2004.04.02
Page No. : 1/4
Symbol
BTC4505N3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limit
Unit
400
V
400
V
6
V
300
mA
0.225
W
150
°C
-55~+150
°C
BTC4505N3
CYStek Product Specification
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