CY2048WAF 查看數據表（PDF） - Cypress Semiconductor

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CY2048WAF

Flash Programmable Capacitor Tuning Array Die for Crystal Oscillator(XO)

Cypress Semiconductor 

CY2048WAF

Absolute Maximum Conditions

(Above which the useful life may be impaired.

For user guidelines, not tested.)

Supply Voltage (VDD) ........................................–0.5 to +7.0V

DC Input Voltage...................................... –0.5V to VDD + 0.5

Crystal Specifications[1]

Output Short Circuit Current ..................................... ± 50 mA

Storage Temperature (Non-condensing) .... –55°C to +125°C

Junction Temperature ................................ –40°C to +125°C

Data Retention @ Tj = 125°C................................> 10 years

ESD (Human Body Model) MIL-STD-883................. > 2000V

Parameter

Description

FNOM

R1

R3/R1

Nominal crystal frequency

Equivalent series resistance (ESR)

Ratio of third overtone mode ESR to

fundamental mode ESR

C0

Crystal shunt capacitance

C1

Crystal motional capacitance

Comments

Fundamental mode, AT cut

Fundamental mode

Ratio used because typical R1 values are

much less than the maximum spec

Min.

10

–

4.5

Typ.

–

–

–

Max.

48

40

–

Unit

MHz

Ω

–

–

–

5 pF

2

–

–

fF

Operating Conditions

VDD

TJ

CXIN

CXOUT

CL

Parameter

COUT

tRAMP

TS

Description

Operating Voltage

Junction Temperature

Capacitance XIN, all tuning caps OFF

Capacitance XOUT, all tuning caps OFF

All tuning Caps OFF

All tuning Caps ON

Output Load Capacitance

Power-up time for VDD to reach minimum specified

voltage (power ramps must be monotonic)

Start up time, 90% VDD to valid frequency on output

Min.

2.7

–40

–

–

4

9.2

–

0.05

–

Typ.

–

–

10

10

5

10

–

–

–

Max. Unit

3.6

V

125 °C

–

pF

–

pF

6

pF

11.4 pF

15

pF

500 ms

10

ms

DC Electrical Specifications TJ = –40 to 125°C over the operating range

Parameter

VIL

VIH

VOL

VOH

IIL

IIH

IOZL

IOZH

IDD

IPD

RUP

Description

Input Low Voltage

Input High Voltage

Output Low Voltage

Output High Voltage

Input Low Current

Input High Current

Output Leakage Current

Output Leakage Current

Power Supply Current

Power Down Current

Input Pull-up resistor

RDN

Output Pull-down resistor

CIN

Input Pin Capacitance

RF

Crystal Feedback R

Condition

CMOS Levels

CMOS Levels

VDD = 2.7V–3.6V, IOL = 8 mA

VDD = 2.7V–3.6V, IOL = –8 mA

Input = VSS

Input = VDD

Output = VSS

Output = VDD

No Load, VDD = 3.3V, 48 MHz

PD# = 0V

VIN = VSS

VIN> = 0.8VDD

VIN = 0.5VDD

PD#/OE pin

XIN = 0

Min.

–

80

–

VDD–0.4

–

–

–

–

–

–

1

80

500

–

300

Typ.

–

–

–

–

1

1

1

–

–

–

3

120

900

–

–

Max.

20

–

0.4

–

10

10

10

50

20

25

6

150

1500

7

800

Unit

%VDD

%VDD

V

V

µA

µA

µA

µA

mA

µA

MΩ

kΩ

kΩ

pF

kΩ

Note:

1. Not 100% tested.

Document #: 38-07738 Rev. *A

Page 3 of 7

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