BAS16T 查看數據表（PDF） - Diode Semiconductor Korea
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BAS16T Datasheet PDF : 3 Pages
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Diode Semiconductor Korea
Surface Mount Fast Switching Diode
BAS16T/BAW70T/BAW56T/BAV99T
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX
Reverse breakdown voltage V(BR)R
Leakage current
IR
Forward voltage
VF
IR=100μA
VR=75V
VR=75V,Tj=150℃
VR=25V,Tj=150℃
VR=25V
IF=1.0mA
IF=10mA
IF=50mA
IF=150mA
85
2.0
100
60
30
0.715
0.855
1.0
1.25
Transition frequency
fT
VCE=5V, IC=10mA,f=100KHz
100
Typical total capacitance
CT
VR=0V,f=1MHz
1.5
Reverse recovery Time
trr
IF=IR=10mA,Irr=0.1*IR,RL=100Ω
4.0
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
UNIT
V
μA
μA
μA
nA
V
MHz
pF
ns
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