GSRU20030 查看數據表（PDF） - New Jersey Semiconductor

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GSRU20030

NPN 300, 350, 400V 20 AMP SWITCHING tf — 100ns TYPICAL

New Jersey Semiconductor 

TYPICAL DC CURRENT GAIN

TYPICAL SATURATION VOLTAGE

03 09 07 10 20 30 50 10

Ic. COLLECTOR CURRENT (AMPS)

01

07 03 OS Q7 10

20 30 SO

10

..

lc, COLLECTOR CURRENT (AMPS)

a£t M10

FORWARD BIASED SAFE OPERATING AREA

£

3,

S

UJ

1o "

1»

TURN-OFF SAFE OPERATING AREA

1

To = 25< C

L= 100/JH

1., •I.S- Is/5'

'MO ratad -

P lueSC V - -~fc

o

J»

20 40 60 ao 100 300 400 600

V«, COLLECTOR TO EMITTER VOLTAGE (VOLTS)

0

0

100

200

300

400

U»

i. PEAK COLLECTOR TO EMITTER VOLTAGE (VOLTS)

PACKAGE OUTLINE

TO-204AA .,,,.MAX.OIA.

2I22..2233MM,AX. OIA. (mm)

H

y.

6.35lmml.

11.43|mm|

(FORMERLY TO-3)

PIN I: BASE

PIN 2 EMITTER

CASE: COLLECTOR

Note:

The technology utilized to produce these devices

results In an Internal diode between the collector and

•mlttar. In some coses this may eliminate the need for

an axMrnal diode to clamp Inductive loads. At 20 A,

t, = 600 ns and V, = 1.25V (typical).

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