NESG2031M05 查看數據表（PDF） - California Eastern Laboratories.
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NESG2031M05 Datasheet PDF : 13 Pages
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ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VCBO Collector to Base Voltage
V
13.0
VCEO Collector to Emitter Voltage V
5.0
VEBO Emitter to Base Voltage
V
1.5
IC
Collector Current
mA
35
PT2
Total Power Dissipation
mW
175
TJ
Junction Temperature
°C
150
TSTG Storage Temperature
°C
-65 to +150
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on 1.08 cm2 x 1.0 mm (t) glass epoxy PCB.
TYPICAL PERFORMANCE CURVES (TA= 25ºC)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
250
Mounted on Glass Epoxy PCB
(1.08 cm2 × 1.0 mm (t) )
200
175
150
100
50
0
25
50
75
100 125 150
Ambient Temperature, TA (°C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 1 V
10
1
0.1
0.01
0.001
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage, VBE (V)
NESG2031M05
THERMAL RESISTANCE
SYMBOLS
PARAMETERS
UNITS
Rth j-c Junction to Case Resistance °C/W
RATINGS
TBD
ORDERING INFORMATION
PART NUMBER
NESG2031M05-T1
QUANTITY
SUPPLY FORM
3 kpcs/reel • Pin 3 (Collector), Pin 4
(Emitter) face the perforation
• 8 mm wide embossed
taping
NESG2031M05-T1-A
3 kpcs/reel
• Pb Free
• Pin 3 (Collector), Pin 4
(Emitter) face the perforation
• 8 mm wide embossed
taping
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.3
f = 1 MHz
0.2
0.1
0
2
4
6
8
10
Collector to Base Voltage, VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 2 V
10
1
0.1
0.01
0.001
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage, VBE (V)
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