MX1011B200Y 查看數據表（PDF） - Philips Electronics
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MX1011B200Y Datasheet PDF : 12 Pages
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Philips Semiconductors
Microwave power transistor
Product specification
MX1011B200Y
FEATURES
QUICK REFERENCE DATA
• Suitable for short and medium
pulse applications up to 100 µs
pulse width, 10% duty factor
• Diffused emitter ballasting resistors
improve ruggedness
• Interdigitated emitter-base
structure provides high emitter
efficiency
Microwave performance up to Tmb = 25 °C in a common base class C
narrowband amplifier.
MODE OF
OPERATION
CONDITIONS
f
VCC
PL
Gp ηC
(GHz) (V) (W) (dB) (%)
Class C
tp = 10 µs; δ = 1% 1.09
50 200 ≥7.5 ≥45
PINNING - SOT439A
• Gold metallization with barrier
realizes very stable characteristics
and excellent lifetime
• Multicell geometry improves power
sharing reduces thermal resistance
PIN
DESCRIPTION
1
collector
2
emitter
3
base connected to flange
• Internal input and output
prematching networks allow an
easier design of circuits.
APPLICATIONS
Intended for use in common base
ok, 4 columns
1
class C broadband pulsed power
amplifiers for IFF, TCAS and Mode S
applications in the 1030 MHz to
1090 MHz bandwidth. Also suitable
3
for medium pulse, heavy duty
operation within the 1030 MHz to
2
1150 MHz bandwidth.
Top view
c
b
3
e
MAM045
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT439A metal ceramic flange
package, with base connected to
flange.
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18
2
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