STP80NS04Z 查看數據表（PDF） - STMicroelectronics

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STP80NS04Z

N - CHANNEL CLAMPED 7.5mΩ - 80A - TO-220 FULLY PROTECTED MESH OVERLAY™ MOSFET

STMicroelectronics 

®

STP80NS04Z

N - CHANNEL CLAMPED 7.5mΩ - 80A - TO-220

FULLY PROTECTED MESH OVERLAY™ MOSFET

TYPE

V DSS

RDS(on)

ID

STP80NS04Z

CLAMPED <0.008 Ω 80 A

s TYPICAL RDS(on) = 0.0075 Ω

s 100% AVALANCHE TESTED

s LOW CAPACITANCE AND GATE CHARGE

s 175 oC MAXIMUM JUNCTION

TEMPERATURE

DESCRIPTION

This fully clamped Mosfet is produced by using

the latest advanced Company’s Mesh Overlay

process which is based on a novel strip layout.

The inherent benefits of the new technology

coupled with the extra clamping capabilities make

this product particularly suitable for the harshest

operation conditions such as those encountered

in the automotive environment. Any other

application requiring extra ruggedness is also

recommended.

APPLICATIONS

s ABS, SOLENOID DRIVERS

s MOTOR CONTROL

s DC-DC CONVERTERS

3

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Sy mb o l

P a ramet er

Va l u e

Un it

V DS

VDG

VGS

ID

ID

IDG

IGS

IDM (•)

Ptot

Drain-source Voltage (VGS = 0)

Drain- gate Voltage

Gate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

Drain Gate Current (continuous)

G ate Source Current (continuous)

Drain Current (pulsed)

T otal Dissipation at Tc = 25 oC

Derating Factor

C LA M P E D

C LA M P E D

C LA M P E D

80

60

± 50

± 50

320

160

1.06

V

V

V

A

A

mA

mA

A

W

W /o C

VESD(G-S) Gate-Source ESD (HBM - C= 100pF, R=1.5 kΩ)

2

VESD(G-D) G ate-Drain ESD (HBM - C= 100pF, R=1.5 kΩ)

4

VESD(D-S) Drain-Source ESD (HBM - C= 100pF, R=1.5 kΩ)

4

Ts tg Storage Temperature

-65 to 175

Tj Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

-40 to 175

( 1) ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

December 1999

kV

kV

kV

oC

oC

1/8

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