B14NF10 查看數據表（PDF） - STMicroelectronics

零件编号

产品描述 (功能)

比赛名单

B14NF10

N-channel 100V - 0.115Ω - 15A - D2PAK/TO-220/TO-220FP Low gate charge STripFET™ II Power MOSFET

STMicroelectronics 

STB14NF10 - STP14NF10 - STP14NF10FP

Electrical characteristics

Table 5. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM (1)

VSD (2)

trr

Qrr

IRRM

Source-drain current

Source-drain current

(pulsed)

Forward on voltage

ISD = 14A, VGS = 0

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 14A,

di/dt = 100A/µs,

VDD = 50V, Tj = 150°C

(see Figure 17)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Min. Typ. Max. Unit

15

A

60

A

1.5 V

90

ns

230

nC

5

A

5/16

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