STGW30NB60HD 查看數據表（PDF） - STMicroelectronics
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STGW30NB60HD Datasheet PDF : 8 Pages
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STGW30NB60HD
N-CHANNEL 30A - 600V TO-247
PowerMESH™ IGBT
TYPE
VCES
VCE(sat)
IC
STGW 30NB60HD 600 V < 2.8 V 30 A
s HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
s LOW ON-VOLTAGE DROP (VCESAT)
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s VERY HIGH FREQUENCY OPERATION
s OFF LOSSES INCLUDE TAIL CURRENT
s CO-PACKAGE WITH TURBOSWITCH™
ANTIPARALLEL DIODE
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).
APPLICATIONS
s HIGH FREQUENCY MOTOR CONTROLS
s WELDING EQUIPMENTS
s SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
23
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCES Collector-Emitter Volt age (VGS = 0)
VECR
VGE
IC
IC
Emitter-Collector Voltage
G ate-Emitter Voltage
Collector Current (continuous) at Tc = 25 oC
Collector Current (continuous) at Tc = 100 oC
ICM(•)
Ptot
Collector Current (pulsed)
T otal Dissipation at Tc = 25 oC
Derating Factor
Ts tg Storage T emperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
July 1999
V a lu e
600
20
± 20
60
30
240
190
1. 52
-65 to 150
150
Unit
V
V
V
A
A
A
W
W /o C
oC
oC
1/8
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