D30NF03L 查看數據表（PDF） - STMicroelectronics

零件编号

产品描述 (功能)

比赛名单

D30NF03L

N-CHANNEL 30V - 0.020 OHM - 30A DPAK STRIPFET POWER MOSFET

STMicroelectronics 

STD30NF03L - STD30NF03L-1

Electrical characteristics

Table 5. Source drain diode

Symbol

Parameter

Test conditions

Min.

ISD

ISDM (1)

Source-drain current

Source-drain current

(pulsed)

VSD (2) Forward on voltage

ISD = 30A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time ISD = 40A, di/dt = 100A/µs,

Reverse recovery charge VDD = 15V, Tj = 150°C

Reverse recovery current (see Figure 14)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Typ.

65

72

2

Max. Unit

30

A

240 A

1.5 V

ns

nC

A

5/14

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