W14NM50(2002) 查看數據表（PDF） - STMicroelectronics
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W14NM50 Datasheet PDF : 5 Pages
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STW14NM50
N-CHANNEL 500V - 0.32Ω - 14A TO-247
MDmesh™Power MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STW14NM50
500V
< 0.35Ω
14 A
s TYPICAL RDS(on) = 0.32Ω
s HIGH dv/dt AND AVALANCHE CAPABILITIES
s 100% AVALANCHE TESTED
s LOW INPUT CAPACITANCE AND GATE
CHARGE
s LOW GATE INPUT RESISTANCE
s TIGHT PROCESS CONTROL AND HIGH
MANUFACTORING YIELDS
3
2
1
TO-247
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprierati strip technique yields overall
dynamic performance that is significantly better than
that of similar completition’s products.
APPLICATIONS
The MDmesh™ family is very suitablr for increase
the power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM (1)
Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt
Peak Diode Recovery voltage slope
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
(*)Limited only by maximum temperature allowed
INTERNAL SCHEMATIC DIAGRAM
Value
500
Unit
V
500
V
±30
V
14
A
8.8
A
56
A
175
1.28
6
–65 to 150
150
W
W/°C
V/ns
°C
°C
(1)ISD ≤12A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
August 2002
1/5
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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