W14NM50 查看數據表（PDF） - STMicroelectronics
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W14NM50 Datasheet PDF : 9 Pages
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STW14NM50
N-CHANNEL 550V @ Tjmax - 0.32Ω - 14A TO-247
MDmesh™ MOSFET
Table 1: General Features
Figure 1: Package
TYPE
VDSS
(@Tjmax)
RDS(on)
ID
STW14NM50
550 V
< 0.35 Ω
14 A
s TYPICAL RDS(on) = 0.32 Ω
s HIGH dv/dt AND AVALANCHE CAPABILITIES
s 100% AVALANCHE RATED
s LOW INPUT CAPACITANCE AND GATE
CHARGE
) s LOW GATE INPUT RESISTANCE
t(s s TIGHT PROCESS CONTROL AND HIGH
c MANUFACTORING YIELDS
TO-247
rodu DESCRIPTION
P The MDmesh™ is a new revolutionary MOSFET
te technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizon-
le tal layout. The resulting product has an
o outstanding low on-resistance, impressively high
s dv/dt and excellent avalanche characteristics. The
b adoption of the Company’s proprierati strip tech-
O nique yields overall dynamic performance that is
- significantly better than that of similar completi-
) tion’s products.
t(s APPLICATIONS
uc The MDmesh™ family is very suitablr for increase
d the power density of high voltage converters allow-
ro ing system miniaturization and higher efficiencies.
Figure 2: Internal Schematic Diagram
lete P Table 2: Order Codes
oSALES TYPE
ObsSTW14NM50
MARKING
W14NM50
PACKAGE
TO-247
PACKAGING
TUBE
July 2004
Rev. 5
1/9
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