STGW50NB60M 查看數據表（PDF） - STMicroelectronics

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STGW50NB60M

N-CHANNEL 50A - 600V - TO-247 PowerMESH™ IGBT

STMicroelectronics 

STGW50NB60M

THERMAL DATA

Rthj-case Thermal Resistance Junction-case Max

Rthj-amb Thermal Resistance Junction-ambient Max

Rthc-h Thermal Resistance Case-heatsink Typ

0.5

°C/W

30

°C/W

0.1

°C/W

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

VBR(CES) Collector-Emitter Breakdown IC = 250 µA, VGE = 0

600

V

Voltage

ICES

Collector cut-off

(VGE = 0)

VCE = Max Rating, TC = 25 °C

VCE = Max Rating, TC = 125 °C

10

µA

100

µA

IGES

Gate-Emitter Leakage

Current (VCE = 0)

VGE = ± 20 V , VCE = 0

± 100 nA

ON (1)

Symbol

VGE(th)

VCE(sat)

Parameter

Gate Threshold Voltage

Collector-Emitter Saturation

Voltage

Test Conditions

VCE = VGE, IC = 250 µA

VGE = 15V, IC = 30 A @25°C

VGE = 15V, IC = 30 A @100°C

VGE = 15V, IC = 50 A @25°C

VGE = 15V, IC = 50 A @100°C

Min.

3

Typ.

4

1.3

1.2

1.5

1.35

Max. Unit

5

V

V

V

1.9

V

V

DYNAMIC

Symbol

gfs

Cies

Coes

Cres

Qg

Qge

Qgc

ICL

Parameter

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Total Gate Charge

Gate-Emitter Charge

Gate-Collector Charge

Latching Current

Test Conditions

VCE = 15 V , IC = 18 A

Min.

VCE = 25 V, f = 1 MHz, VGE = 0

VCE = 480 V, IC = 50 A,

VGE = 15 V

Vclamp = 480 V , Tj = 125°C

300

RG = 10 Ω

Typ.

22

4500

400

70

231

28

97

Max. Unit

S

pF

pF

pF

nC

nC

nC

A

SWITCHING ON

Symbol

Parameter

td(on)

tr

Turn-on Delay Time

Rise Time

(di/dt)on

Eon

Turn-on Current Slope

Turn-on Switching Losses

Test Conditions

VCC = 480 V, IC = 50 A

RG = 10Ω , VGE = 15 V

VCC= 480 V, IC = 50 A

RG=10 Ω , VGE = 15 V

Tj = 125°C

Min.

Typ.

45

30

1600

800

Max.

Unit

ns

ns

A/µs

µJ

2/9

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