W150NF55 查看數據表（PDF） - STMicroelectronics

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W150NF55

N-channel 55V - 0.005Ω - 120A - D2PAK/TO-220/TO-247 STripFET™ II Power MOSFET

STMicroelectronics 

STB150NF55 - STP150NF55 - STW150NF55

Figure 17. Allowable lav vs time in avalanche

Electrical characteristics

The previous curve gives the safe operating area for unclamped inductive loads, single

pulse or repetitive, under the following conditions:

PD(AVE) = 0.5 * (1.3 * BVDSS * IAV)

EAS(AR) = PD(AVE) * tAV

Where:

IAV is the allowable current in avalanche

PD(AVE) is the average power dissipation in avalanche (single pulse)

tAV is the time in avalanche

To derate above 25 °C, at fixed IAV , the following equation must be applied:

IAV = 2 * (Tjmax - TCASE)/ (1.3 * BVDSS * Zth)

Where:

Zth = K * Rth is the value coming from normalized thermal response at fixed pulse width

equal to TAV .

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