STW47NM60 查看數據表（PDF） - STMicroelectronics
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STW47NM60 Datasheet PDF : 6 Pages
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STW47NM60
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 250 V, ID = 23.5 A
RG = 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDD = 400 V, ID = 47 A,
VGS = 10 V
Qgd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf
Fall Time
tc
Cross-over Time
Test Conditions
VDD = 400 V, ID = 47 A,
RG = 4.7Ω, VGS = 10 V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 47 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 47 A, di/dt = 100 A/µs,
VDD = 100 V, Tj = 25°C
(see test circuit, Figure 5)
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 47 A, di/dt = 100 A/µs,
VDD = 100 V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min. Typ. Max. Unit
30
ns
20
ns
96
134
nC
31
nC
43
nC
Min.
Typ.
16
23
40
Max.
Unit
ns
ns
ns
Min. Typ. Max. Unit
47
A
180
A
1.5
V
508
ns
10
µC
40
A
650
ns
14
µC
43
A
3/6
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