STW16NA60 查看數據表（PDF） - STMicroelectronics

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STW16NA60

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STMicroelectronics 

STW16NA60

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

TYPE

STW16NA60

VDSS

600 V

RDS(on)

< 0.4 Ω

ID

16 A

PRELIMINARY DATA

s TYPICAL RDS(on) = 0.33 Ω

s ± 30V GATE TO SOURCE VOLTAGE

RANTING

s 100% AVALANCHE TESTED

s REPETITIVE AVALANCHE DATA AT 100oC

s LOW INTRINSIC CAPACITANCE

s GATE CHARGE MINIMIZED

s REDUCED VOLTAGE SPREAD

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITCH MODE POWER SUPPLY (SMPS)

s CONSUMER AND INDUSTRIAL LIGHTING

s DC-AC CONVERTER FOR WELDING

EQUIPMENT AND UNINTERRUPTABLE

POWER SUPPLY (UPS)

3

2

1

TO-247

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS Drain-source Voltage (VGS = 0)

VDGR

VGS

ID

ID

Drain- gate Voltage (RGS = 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

IDM(•)

Ptot

Drain Current (pulsed)

Total Dissipation at Tc = 25 oC

Derating Factor

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

January 1998

Value

600

600

± 30

16

10

64

250

2

-65 to 150

150

Unit

V

V

V

A

A

A

W

W/oC

oC

oC

1/5

This is preliminary information on a new product now in development or undergoing evaluation.Details are subject to change without notice.

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