STW13NB60 查看數據表（PDF） - STMicroelectronics
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STW13NB60 Datasheet PDF : 9 Pages
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STW13NB60 STH13NB60FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
Pa ram et e r
Turn-on delay Time
Rise Time
Test Conditions
VDD = 300 V ID = 2.5 A
RG = 4.7 Ω
VGS = 10 V
Min.
T yp.
27
13
Max.
Unit
ns
ns
Qg
Total Gate Charge
VDD = 480 V ID = 13 A VGS = 10 V
Q gs Gat e-Source Charge
Qgd Gate-Drain Charge
58
82
nC
15.5
nC
23
nC
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
Pa ram et e r
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 480V ID = 13 A
RG = 4.7 Ω VGS = 10 V
Min.
T yp.
15
15
25
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Pa ram et e r
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD =13 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 13 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
I R RM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
T yp.
Max.
13
52
Unit
A
A
1.6
V
630
ns
6.8
µC
22
A
Safe Operating Area for TO-247
Safe Operating Area for ISOWATT218
3/9
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