STW10NB60 查看數據表（PDF） - STMicroelectronics

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STW10NB60

N - CHANNEL 600V - 0.69Ω - 10A - TO-247 PowerMESH™ MOSFET

STMicroelectronics 

®

STW10NB60

N - CHANNEL 600V - 0.69Ω - 10A - TO-247

PowerMESH™ MOSFET

TYPE

VDSS

RDS(on)

ID

ST W10NB 60

600 V < 0.8 Ω

10 A

s TYPICAL RDS(on) = 0.69 Ω

s EXTREMELY HIGH dv/dt CAPABILITY

s 100% AVALANCHE TESTED

s VERY LOW INTRINSIC CAPACITANCES

s GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an

advanced family of power MOSFETs with

outstanding performances. The new patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s SWITCH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

s HIGH CURRENT, HIGH SPEED SWITCHING

23

1

TO-247

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Sy mb o l

P a ramet er

V DS

V DGR

VGS

ID

ID

Drain-source Voltage (VGS = 0)

Drain- gate Voltage (RGS = 20 kΩ)

G ate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

IDM (•)

Ptot

Drain Current (pulsed)

T otal Dissipat ion at Tc = 25 oC

Derating Factor

dv/dt( 1) Peak Diode Recovery voltage slope

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

October 1998

Va l u e

600

600

± 30

10

6.2

40

160

1.28

4.5

-65 to 150

150

( 1) ISD ≤10A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

Un it

V

V

V

A

A

A

W

W /o C

V/ns

oC

oC

1/8

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