STW12NC60 查看數據表（PDF） - STMicroelectronics
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STW12NC60 Datasheet PDF : 8 Pages
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ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDD = 300V, ID = 6 A
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 3)
VDD = 480V, ID = 12 A,
VGS = 10V, RG = 4.7Ω
SWITCHING OFF
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf
Fall Time
tc
Cross-over Time
Test Conditions
VDD = 480V, ID = 12 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 12 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 12 A, di/dt = 100A/µs,
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
STW12NC60
Min. Typ. Max. Unit
20
ns
15
ns
65
90
nC
13
nC
28
nC
Min. Typ. Max. Unit
14
ns
25
ns
30
ns
Min. Typ. Max. Unit
12
A
48
A
1.6
V
590
ns
5.6
µC
19
A
Safe Operating Area
Thermal Impedance
3/8
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