STP9NK65Z 查看數據表（PDF） - STMicroelectronics

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STP9NK65Z

N-channel 650 V - 1 Ω - 6.4 A TO-220 / TO-220FP Zener-protected SuperMESH™ Power MOSFET

STMicroelectronics 

STP9NK65Z - STP9NK65ZFP

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

VDS

VGS

ID

ID

IDM (2)

PTOT

Drain-source voltage (VGS = 0)

Gate- source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Derating factor

VESD(G-S) Gate source ESD(HBM-C=100 pF, R=1.5 kΩ)

dv/dt (3) Peak diode recovery voltage slope

VISO Insulation withstand voltage (DC)

Tj

Operating junction temperature

Tstg

Storage temperature

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤ 6.4 A, di/dt ≤ 200 A/µs, VDD ≤ 80%V(BR)DSS

Value

TO-220 TO-220FP

650

6.4

4

25.6

± 30

6.4 (1)

4(1)

25.6 (1)

125

30

1

0.24

4000

4.5

-

2500

-55 to 150

-55 to 150

Unit

V

V

A

A

A

W

W/°C

V

V/ns

V

°C

°C

Table 3. Thermal data

Symbol

Parameter

Rthj-case Thermal resistance junction-case max

Rthj-amb Thermal resistance junction-ambient max

Tl

Maximum lead temperature for soldering purpose

Value

TO-220 TO-220FP

1

4.2

62.5

300

Unit

°C/W

°C/W

°C

Table 4. Avalanche characteristics

Symbol

Parameter

Avalanche current, repetitive or not-repetitive

IAR

(pulse width limited by Tj Max)

Single pulse avalanche energy

EAS

(starting Tj=25 °C, ID=IAR, VDD=50 V)

Value

Unit

6.4

A

200

mJ

3/15

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