B12NK80Z(2005) 查看數據表（PDF） - STMicroelectronics
零件编号
产品描述 (功能)
比赛名单
B12NK80Z
(Rev.:2005)
(Rev.:2005)
STMicroelectronics
B12NK80Z Datasheet PDF : 15 Pages
| |||
1 Electrical ratings
1 Electrical ratings
STB12NK80Z - STP12NK80Z - STW12NK80Z
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-Source Voltage (VGS = 0)
VDGR Drain-gate Voltage (RGS = 20kΩ)
VGS
Gate-Source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM Note 2 Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5kΩ)
dv/dt
Note 1
Peak Diode Recovery voltage slope
Tj
Operating Junction Temperature
Tstg
Storage Temperature
Value
800
800
± 30
10.5
6.6
42
190
1.51
6000
4.5
-55 to 150
Table 2. Thermal data
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-amb Max
Maximum Lead Temperature For Soldering
Purpose
TO-220/D²PAK
0.66
62.5
300
TO-247
50
Table 3. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche Current, repetitive or
Not-Repetitive (pulse width limited by Tj max)
Single Pulse Avalanche Energy
EAS
(starting Tj=25°C, ID=IAR, VDD= 50V)
Max Value
10.5
400
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
°C
Unit
°C/W
°C/W
°C
Unit
A
mJ
2/15
Share Link: