STB12NK80Z(2005) 查看數據表（PDF） - STMicroelectronics
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STB12NK80Z
(Rev.:2005)
(Rev.:2005)
STMicroelectronics
STB12NK80Z Datasheet PDF : 15 Pages
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STB12NK80Z - STP12NK80Z - STW12NK80Z
2 Electrical characteristics
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
V(BR)DSS
Drain-Source Breakdown
Voltage
IDSS
Zero Gate Voltage Drain
Current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate Body Leakage Current
(VDS = 0)
Gate Threshold Voltage
Static Drain-Source On
Resistance
Test Conditions
ID = 1mA, VGS= 0
VDS = Max Rating,
VDS = Max Rating,Tc = 125°C
VGS = ±20V
VDS= VGS, ID = 100 µA
VGS= 10 V, ID= 4.5 A
Min.
800
3
Typ.
3.75
0.65
Max.
1
50
±10
4.5
0.75
Unit
V
µA
µA
µA
V
Ω
Table 5. Dynamic
Symbol
Parameter
Test Conditions
gfs Note 4
Ciss
Coss
Crss
Coss eq.
Note 5
Qg
Qgs
Qgd
Forward Transconductance VDS =15V, ID = 5.25A
Input Capacitance
Output Capacitance
VDS =25V, f=1 MHz, VGS=0
Reverse Transfer Capacitance
Equivalent Ouput Capacitance VGS=0, VDS =0V to 640V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=640V, ID = 10.5 A
VGS =10V
(see Figure 17)
Min. Typ. Max. Unit
12
S
2620
pF
250
pF
53
pF
100
pF
87
nC
14
nC
44
nC
Table 6. Switching times
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
td(off)
tf
tr(Voff)
tf
tc
Turn-off Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD=400 V, ID=5.25 A,
RG=4.7Ω, VGS=10V
(see Figure 18)
VDD=400 V, ID=5.25A,
RG=4.7Ω, VGS=10V
(see Figure 18)
VDD=640 V, ID=10.5A,
RG=4.7Ω, VGS=10V
(see Figure 18)
Min. Typ. Max. Unit
30
ns
18
ns
70
ns
20
ns
16
ns
15
ns
28
ns
3/15
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