STW6NB90 查看數據表（PDF） - STMicroelectronics

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STW6NB90

N - CHANNEL 900V - 1.7Ω - 6.3A - TO-247 PowerMESH™ MOSFET

STMicroelectronics 

®

STW6NB90

N - CHANNEL 900V - 1.7Ω - 6.3A - TO-247

PowerMESH™ MOSFET

PRELIMINARY DATA

TYPE

VDSS

RDS(on)

ID

STW6NB90

900 V

<2Ω

6.3 A

s TYPICAL RDS(on) = 1.7 Ω

s EXTREMELY HIGH dv/dt CAPABILITY

s 100% AVALANCHE TESTED

s VERY LOW INTRINSIC CAPACITANCES

s GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an

advanced family of power MOSFETs with

outstanding performances. The new patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

3

2

1

TO-247

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s SWITCH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

s HIGH CURRENT, HIGH SPEED SWITCHING

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS Drain-source Voltage (VGS = 0)

VDGR

VGS

ID

ID

Drain- gate Voltage (RGS = 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

IDM(•) Drain Current (pulsed)

Ptot Total Dissipation at Tc = 25 oC

Derating Factor

dv/dt(1) Peak Diode Recovery voltage slope

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

February 1999

Value

900

900

± 30

6.3

4

25

160

1.28

4

-65 to 150

150

(1) ISD ≤ 6A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

Unit

V

V

V

A

A

A

W

W/oC

V/ns

oC

oC

1/5

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