P60NS04ZB 查看數據表（PDF） - STMicroelectronics

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P60NS04ZB

N-channel clamped - 10mΩ- 60A - TO-220 Fully protected Mesh Overlay™ Power MOSFET

STMicroelectronics 

STP60NS04ZB

N-channel clamped - 10mΩ - 60A - TO-220

Fully protected Mesh Overlay™ Power MOSFET

General features

Type

VDSS

RDS(on)

ID

STP60NS04ZB Clamped < 0.015Ω 60A

■ 100% avalanche tested

■ Low capacitance and gate charge

■ 175 °C maximum junction temperature

Description

This fully clamped Power MOSFET is produced

by using the latest advanced Company’s Mesh

Overlay process which is based on a novel strip

layout. The inherent benefits of the new

technology coupled with the extra clamping

capabilities make this product particularly suitable

for the harshest operation conditions such as

those encountered in the automotive

environment. Any other application requiring extra

ruggedness is also recommended.

Applications

■ Switching application

3

2

1

TO-220

Internal schematic diagram

Order codes

Part number

STP60NS04ZB

Marking

P60NS04ZB

Package

TO-220

Packaging

Tube

October 2006

Rev 2

1/13

www.st.com

13

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