K2669 查看數據表（PDF） - Shindengen
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K2669 Datasheet PDF : 12 Pages
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HVX-2 Series Power MOSFET
2SK2669 ( F5V90HVX2 )
●Electrical Characteristics Tc = 25℃
Item
Symbol
Conditions
Drain-Source Breakdown Voltage
V(BR)DSS ID = 1mA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS VDS = 900V, VGS = 0V
Gate-Source Leakage Current
IGSS VGS = ±30V, VDS = 0V
Forward Tranｓconductance
gfs ID = 2.5A, VDS = 10V
Static Drain-Source On-ｓtate Resistance RDS(ON) ID =2.5A, VGS = 10V
Gate Threshold Voltage
VTH ID = 1mA, VDS = 10V
Source-Drain Diode Forward Voltage
VSD IS = 2.5A, VGS = 0V
Thermal Resistance
θjc junction to case
Total Gate Charge
Qg VGS = 10V, ID = 5A, VDD = 400V
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss VDS = 25V, VGS = 0V, f = 1MHZ
Output Capacitance
Coss
Turn-On Time
ton ID = 2.5A, VGS = 10V, RL = 60Ω
Turn-Off Time
toff
Min. Typ. Max. Unit
900
V
250 μA
±0.1
2.4 4.0
S
2.1 2.8 Ω
2.5 3.0 3.5 V
1.5
2.08 ℃/Ｗ
45
nC
1140
23
pF
105
55 100 ns
210 350
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