2SK1961 查看數據表（PDF） - SANYO -> Panasonic

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2SK1961

N-Channel Junction Silicon FET

SANYO -> Panasonic 

Ordering number:ENN4502

N-Channel Junction Silicon FET

2SK1961

High-Frequency Low-Noise

Amplifier Applications

Applications

· High-frequency low-noise amplifier applications.

Features

· Adoption of FBET process.

· Large | yfs |.

· Small Ciss.

· Ultralow noise figure.

Package Dimensions

unit:mm

2019B

[2SK1961]

5.0

4.0

4.0

0.45

0.5

0.45

0.44

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Drain-to-Source Voltage

Gate-to-Drain Voltage

Gate Current

Drain Current

Allowable Power Dissipation

Junction Temperature

Storage Temperature

Symbol

VDSX

VGDS

IG

ID

PD

Tj

Tstg

123

1.3

1.3

Conditions

1 : Source

2 : Gate

3 : Drain

SANYO : NP

JEDEC : TO-92

EIAJ : SC-43

Ratings

Unit

15 V

–15 V

10 mA

100 mA

500 mW

150 ˚C

–55 to +150 ˚C

Electrical Characteristics at Ta = 25˚C

Parameter

Symbol

Conditions

Gate-to-Drain Breakdown Voltage

V(BR)GDS IG=–10µA, VDS=0

Gate-to-Source Leakage Current

IGSS VGS=–10V, VDS=0

Cutoff Voltage

VGS(off) VDS=5V, ID=100µA

Zero-Gate Voltage Drain Current

IDSS VDS=5V, VGS=0

Forward Transfer Admittance

| yfs |1

| yfs |2

VDS=5V, ID=10mA, f=1kHz

VDS=5V, VGS=0, f=1kHz

Input Capacitance

Ciss

VDS=5V, VGS=0, f=1MHz

Reverse Transfer Capacitance

Crss VDS=5V, VGS=0, f=1MHz

* : The 2SK1961 is classified by IDSS as follows : (unit : mA).

40 Y3 52 48 Y4 63 57 Y5 75

Ratings

Unit

min

typ

max

–15

V

–1.0 nA

–1.2 –2.6 –4.5 V

40*

75* mA

15

19

mS

24

32

mS

5.5

pF

1.6

pF

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71599TH (KT)/13194TH (KOTO) X-8395 No.4502–1/6

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