IRF510 查看數據表（PDF） - Harris Semiconductor

零件编号

产品描述 (功能)

比赛名单

IRF510

4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs

Harris Semiconductor 

IRF510, IRF511, IRF512, IRF513

Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)

PARAMETER

SYMBOL

TEST CONDITIONS

Input Capacitance

Output Capacitance

Reverse-Transfer Capacitance

Internal Drain Inductance

Internal Source Inductance

CISS

COSS

CRSS

LD

LS

VGS = 0V, VDS = 25V, f = 1.0MHz, (Figure 11)

Measured From the

Contact Screw On Tab

To Center of Die

Measured From the

Drain Lead, 6mm

(0.25in) From Package

to Center of Die

Measured From The

Source Lead, 6mm

(0.25in) From Header to

Source Bonding Pad

Modified MOSFET

Symbol Showing the

Internal Devices

Inductances

D

LD

G

LS

S

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

RθJC

RθJA

Free air operation

MIN TYP MAX UNITS

-

135

-

pF

-

80

-

pF

-

20

-

pF

-

3.5

-

nH

-

4.5

-

nH

-

7.5

-

nH

-

-

3.5 oC/W

-

-

80 oC/W

Source to Drain Diode Specifications

PARAMETER

Continuous Source to Drain Current

Pulse Source to Drain Current

(Note 3)

SYMBOL

Test Conditions

ISD

ISDM

Modified MOSFET

Symbol Showing the

Integral Reverse

P-N Junction Diode

G

MIN TYP MAX UNITS

D

-

-

5.6

A

-

-

20

A

S

Source to Drain Diode Voltage (Note 2)

Reverse Recovery Time

Reverse Recovered Charge

VSD

trr

QRR

TJ = 25oC, ISD = 5.6A, VGS = 0V (Figure 13)

TJ = 25oC, ISD = 5.6A, dISD/dt = 100A/µs

TJ = 25oC, ISD = 5.6A, dISD/dt = 100A/µs

-

-

2.5

V

4.6 96 200

ns

0.17 0.4 0.83 µC

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 25V, start TJ = 25oC, L = 910µH, RG = 25Ω, peak IAS = 5.6A (See Figure 15, 16).

5-3

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