IF9030 查看數據表（PDF） - InterFET
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IF9030 Datasheet PDF : 1 Pages
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B-40
01/99
IF9030
N-Channel Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Storage Temperature Range
– 20 V
10 mA
300 mW
2.4 mW/°C
– 65°C to 200°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
Common Source Input Capacitance
Common Source
Reverse Transfer Capacitance
Equivalent Short Circuit
Input Noise Voltage
V(BR)GSS
IGSS
VGS(OFF)
IDSS
IF9030
Min Max Unit
Process NJ903L
Test Conditions
– 20
V IG = – 1 µA, VDS = ØV
– 0.1 nA VGS = – 10V, VDS = ØV
– 0.35 – 2 V VDS = 10V, ID = 0.5 nA
30 300 mA VDS = 10V, VGS = ØV
gfs
80
mS VDS = 10V, VGS = ØV
f = 1 kHz
Ciss
60 pF VDS = 10V, ID = 5 mA
f = 1 MHz
Crss
20 pF VDS = 10V, ID = 5 mA
f = 1 MHz
Typ
e¯N
0.5
nV/√Hz VDG = 4V, ID = 5 mA
f = 1 kHz
TOÐ52 Package
Dimensions in Inches (mm)
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
www.interfet.com
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