BSS149 查看數據表（PDF） - Siemens AG

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BSS149

SIPMOS® Small-Signal Transistor

Siemens AG 

BSS 149

Typ. transfer characteristics ID = f (VGS)

parameter: tp = 80 µs, VDS ≥ 2 × ID × RDS(on)max.

Typ. forward transconductance gfs = f (ID)

parameter: VDS ≥ 2 × ID × R , DS(on)max. tp = 80 µs

Drain-source on-resistance

RDS(on) = f (Tj)

parameter: ID = 0.05 A, VGS = 0 V, (spread)

Typ. capacitances C = f (VDS)

parameter: VGS = 0, f = 1 MHz

Semiconductor Group

5

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