TGF4112-EPU 查看數據表（PDF） - TriQuint Semiconductor
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TGF4112-EPU Datasheet PDF : 9 Pages
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Mechanical Drawing of TGF4112-EPU
81.0
(2.057)
59.9
(1.520)
48.8
(1.239)
32.2
(0.819)
15.7
(0.399)
4.7
(0.119)
0.0
Alternate gate pad
0.0
7.4
(0.187)
)
52.5
(1.333)
45.1
(1.145)
35.9
(0.913)
28.5
(0.725)
19.4
(0.493)
12.0
(0.305)
23.8
(0.605)
36.0
(0.914)
Alternate drain pad
Units: mils (mm)
Thickness: 4.0 (0.102)
Gate pad sizes are 4.0 x 4.0 (0.10 x 0.10)
Drain pad sizes are 4.7 x 14.5 (0.12 x 0.37)
A minimum of three gate bonds and six drain bonds
is recommended for operation. Sources are
connected to backside metalization. Alternate gate
and drain pads are located on either end of the
FET for paralleling TGF4112-EPUs.
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