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MMBT6427 查看數據表(PDF) - Fairchild Semiconductor

零件编号
产品描述 (功能)
比赛名单
MMBT6427
Fairchild
Fairchild Semiconductor Fairchild
MMBT6427 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
2N6427
MMBT6427
C
C
BE
TO-92
SOT-23
Mark: 1V
E
B
NPN Darlington Transistor
This device is designed for applications requiring extremely
high current gain at collector currents to 1.0 A. Sourced from
Process 05. See MPSA14 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current - Continuous
TJ, Tstg
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
40
40
12
1.2
-55 to +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
Max
2N6427
625
5.0
83.3
200
*MMBT6427
350
2.8
357
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Units
mW
mW /°C
°C/W
°C/W
1997 Fairchild Semiconductor Corporation

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