2N6426 查看數據表（PDF） - Fairchild Semiconductor

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2N6426

NPN Darlington Transistor

Fairchild Semiconductor 

2N6426

Discrete POWER & Signal

Technologies

C

BE

TO-92

NPN Darlington Transistor

This device is designed for applications requiring extremely

high current gain at currents to 1.0 A. Sourced from

Process 05. See MPSA14 for characteristics.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol

Parameter

Value

VCEO

Collector-Emitter Voltage

40

VCBO

Collector-Base Voltage

40

VEBO

Emitter-Base Voltage

12

IC

TJ, Tstg

Collector Current - Continuous

Operating and Storage Junction Temperature Range

1.2

-55 to +150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol

Characteristic

PD

Total Device Dissipation

Derate above 25°C

RθJC

Thermal Resistance, Junction to Case

RθJA

Thermal Resistance, Junction to Ambient

Max

2N6426

625

5.0

83.3

200

Units

V

V

V

A

°C

Units

mW

mW/°C

°C/W

°C/W

© 1997 Fairchild Semiconductor Corporation

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