P4C187-25LMB 查看數據表（PDF） - Performance Semiconductor

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P4C187-25LMB

ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS

Performance Semiconductor 

P4C187/187L

POWER DISSIPATION CHARACTERISTICS VS. SPEED

Symbol

Parameter

Temperature

Range

Commercial

–10 –12 –15 –20 –25 –35 –45 Unit

180 170 160 155 150 N/A N/A mA

I

CC

Dynamic Operating Current* Industrial

Military

N/A 180 170 160 155 150 N/A mA

N/A N/A 170 160 155 150 145 mA

*VCC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL.

DATA RETENTION CHARACTERISTICS (P4C187L Military Temperature Only)

Symbol

Parameter

VDR

VCC for Data Retention

Test Conditons

Typ.*

Max

Min

VCC =

VCC =

Unit

2.0V 3.0V 2.0V 3.0V

2.0

V

ICCDR Data Retention Current

tCDR

Chip Deselect to

Data Retention Time

t†

Operation Recovery Time

R

*TA = +25˙C

§tRC = Read Cycle Time

† This parameter is guaranteed but not tested.

CE ≥ VCC –0.2V,

V

IN

≥

V

CC

–0.2V

or

V

IN

≤

0.2V

10

0

t§

RC

15 600 900 µA

ns

ns

DATA RETENTION WAVEFORM

DATA RETENTION MODE

VCC

4.5V

VDR ≥ 2V

4.5V

t CDR

tR

CE

VDR

VIH

VIH

57

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