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P4C187 查看數據表(PDF) - Performance Semiconductor

零件编号
产品描述 (功能)
比赛名单
P4C187
Performance-Semiconductor
Performance Semiconductor Performance-Semiconductor
P4C187 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
P4C187/187L
AC CHARACTERISTICS - WRITE CYCLE
(V
CC
=
5V
±
10%,
All
Temperature
Ranges)(2)
Symbol
Parameter
–10
–12
–15
–20
–25
–35
–45
Unit
Min Max Min Max Min Max Min Max Min Max Min Max Min Max
tWC
Write Cycle Time 10
12
15
20
25
35
45
ns
t
Chip Enable Time 8
10
2
15
20
25
30
ns
CW
to End of Write
tAW
Address Valid to 8
10
12
15
20
25
30
ns
End of Write
tAS
Address Set-up
0
0
0
0
0
0
0
ns
Time
tWP
Write Pulse Width 8
10
12
15
20
25
30
ns
t
Address Hold Time 0
0
0
0
0
0
0
ns
AH
from End of Write
tDW
Data Valid to End 6
7
10
13
15
20
25
ns
of Write
tDH
Data Hold Time
0
0
0
0
0
0
0
ns
tWZ
Write Enable to
Output in High Z
6
7
8
12
15
17
20 ns
tOW
Output Active from 0
0
0
0
0
0
0
ns
End of Write
TIMING WAVEFORM OF WRITE CYCLE NO. 1 (WE CONTROLLED)(9)
(11)
t WC
ADDRESS
CE
t CW
t AW
t WP
t WR
t AH
WE
DATA IN
DATA OUT
t AS
DATA UNDEFINED
t
(12)
WZ
t DW
DATA VALID
t DH
t
(10,
OW
12)
HIGH IMPEDANCE
Notes:
9. CE and WE must be LOW for WRITE cycle.
10. If CE goes HIGH simultaneously with WE HIGH, the output remains
in a high impedance state.
11. Write Cycle Time is measured from the last valid address to the first
transition address.
12. Transition is measured ±200mV from steady state voltage prior to
change with specified loading in Figure 1. This parameter is
sampled and not 100% tested.
59

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