D1681Q 查看數據表（PDF） - SANYO -> Panasonic

零件编号

产品描述 (功能)

比赛名单

D1681Q

PNP/NPN Epitaxial Planar Silicon Transistors

SANYO -> Panasonic 

Parameter

Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Turn-ON Time

Storage Time

Fall Time

2SB1141/2SD1681

Symbol

Conditions

VCE(sat) IC=(–)500mA, IB=(–)50mA

VBE(sat)

V(BR)CBO

V(BR)CEO

V(BR)EBO

ton

tstg

IC=(–)500mA, IB=(–)50mA

IC=(–)10µA, IE=0

IC=(–)1mA, RBE=∞

IE=(–)10µA, IC=0

See specified Test Circuit

See specified Test Circuit

tf

See specified Test Circuit

Switching Time Test Circuit

Ratings

Unit

min

typ

max

(–170) (–400) mV

120 300 mV

(–)0.85 (–)1.2 V

(–)20

V

(–)18

V

(–)5

V

50

ns

(60)

ns

200

ns

70

ns

No.2020–2/4

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