2SC4272 查看數據表（PDF） - SANYO -> Panasonic

零件编号

产品描述 (功能)

比赛名单

2SC4272

NPN Epitaxial Planar Silicon Transistor

SANYO -> Panasonic 

2SC4272

Parameter

Output Power

Collector Efficiency

Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Symbol

Conditions

PO

ηc

VCE(sat)

VBE(sat)

V(BR)CBO

V(BR)CER

V(BR)CEO

V(BR)EBO

VCC=12V, f=27MHz, Pin=35mW

See specified test circuit.

IC=500mA, IB=50mA

IC=500mA, IB=50mA

IC=10µA, IE=0

IC=1mA, RBE=150Ω

IC=1mA, RBE=∞

IE=10µA, IC=0

Collector Effieiency Test Circuit

Ratings

Unit

min

typ

max

1.0

1.8

W

60

%

0.2

0.6 V

0.9

1.2 V

75

V

75

V

45

V

5

V

No.2970–2/4

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