2SB919 查看數據表（PDF） - SANYO -> Panasonic

零件编号

产品描述 (功能)

比赛名单

2SB919

PNP/NPN Epitaxial Planar Silicon Transistors

SANYO -> Panasonic 

Parameter

Collector-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Turn-ON Time

Storage Time

Fall Time

Switching Time Test Circuit

2SB919/2SD1235

Symbol

Conditions

VCE(sat) IC=(–)3A, IB=(–)0.15A

V(BR)CBO

V(BR)CEO

V(BR)EBO

ton

tstg

IC=(–)1mA, IE=0

IC=(–)1mA, RBE=∞

IE=(–)1mA IC=0

See specified Test Circuit

See specified Test Circuit

tf

See specified Test Circuit

Ratings

Unit

min typ max

0.4 V

(–0.5) V

(–)60

V

(–)30

V

(–)6

V

0.1

µs

(0.2)

µs

0.5

µs

0.03

µs

No.1046–2/4

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