2SD1722 查看數據表（PDF） - SANYO -> Panasonic

零件编号

产品描述 (功能)

比赛名单

2SD1722

PNP/NPN Epitaxial Planar Silicon Transistors

SANYO -> Panasonic 

Parameter

Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Turn-ON Time

Storage Time

Fall Time

Switching Time Test Circuit

2SB1165/2SD1722

Symbol

Conditions

VCE(sat) IC=(–)3A, IB=(–)0.15A

VBE(sat)

V(BR)CBO

V(BR)CEO

V(BR)EBO

ton

tstg

IC=(–)3A, IB=(–)0.15A

IC=(–)10µA, IE=0

IC=(–)1mA, RBE=∞

IE=(–)10µA, IC=0

See specified Test Circuit

See specified Test Circuit

tf

See specified Test Circuit

Ratings

Unit

min

typ

max

220 400 mV

(–280) (–550) mV

(–)0.95 (–)1.3 V

(–)60

V

(–)50

V

(–)6

V

(50)50

ns

500

ns

(450)

ns

20(20)

ns

No.2046–2/4

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