datasheetbank_Logo
数据手册搜索引擎和 Datasheet免费下载 PDF

P/N +描述+內容搜索

關鍵詞
产品描述 (功能) : 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

PRODUCT DESCRIPTION
The SST39LF512, SST39LF010,SST39LF020, SST39LF040 and SST39VF512, SST39VF010,SST39VF020, SST39VF040 are 64K x8, 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF512/010/020/040 devices write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF512/010/020/040 devices write with a 2.7-3.6V power supply. The devices conform to JEDEC standard pinouts for x8 memories.

FEATURES:
• Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8
• Single Voltage Read and Write Operations
– 3.0-3.6V for SST39LF512/010/020/040
– 2.7-3.6V for SST39VF512/010/020/040
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low power Consumption(typical values at 14 MHz)
– Active Current: 5 mA (typical)
– Standby Current: 1 µA (typical)
• Sector-Erase Capability
– Uniform 4 KByte sectors
• Fast Read Access Time:
– 45 ns for SST39LF512/010/020/040
– 55 ns for SST39LF020/040
– 70 ns for SST39VF512/010/020/040
• Latched Address and Data
• Fast Erase and Byte-Program:
– Sector-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Byte-Program Time: 14 µs (typical)
– Chip Rewrite Time:
  1 second (typical) for SST39LF/VF512
  2 seconds (typical) for SST39LF/VF010
  4 seconds (typical) for SST39LF/VF020
  8 seconds (typical) for SST39LF/VF040
• Automatic Write Timing
– Internal VPPGeneration
• End-of-Write Detection
– Toggle Bit
– Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pinouts and command sets
• Packages Available
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm)
– 48-ball TFBGA (6mm x 8mm)
– 34-ball WFBGA (4mm x 6mm) for 1M and 2M
• All devices are RoHS compliant

产品描述 (功能) : PCB Relay

A Cubic, Single-pole 10-A power Relay

• High Capacity (-E) and 0.8mm Contact Gap (-G) versions
• Subminiature “sugar cube” relay with universal footprint.
• Conforms to EN 61810-1. UL recognized/ CSA certified.
• UL class-F coil insulation model available (UL class-B coil insulation for standard model).
• Withstands impulse of up to 4,500 V.
• 400-mW and 360-mW coil power types available.
• RoHS Compliant

产品描述 (功能) : 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash

PRODUCT DESCRIPTION
The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF200A/400A/800A write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF200A/400A/800A write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16 memories.

FEATURES:
• Organized as 128K x16 / 256K x16 / 512K x16
• Single Voltage Read and Write Operations
   – 3.0-3.6V for SST39LF200A/400A/800A
   – 2.7-3.6V for SST39VF200A/400A/800A
• Superior Reliability
   – Endurance: 100,000 Cycles (typical)
   – Greater than 100 years Data Retention
• Low power Consumption (typical values at 14 MHz)
   – Active Current: 9 mA (typical)
   – Standby Current: 3 µA (typical)
• Sector-Erase Capability
   – Uniform 2 KWord sectors
• Block-Erase Capability
   – Uniform 32 KWord blocks
• Fast Read Access Time
   – 45 and 55 ns for SST39LF200A/400A
   – 55 ns for SST39LF800A
   – 70 and 90 ns for SST39VF200A/400A/800A
• Latched Address and Data
• Fast Erase and Word-Program
   – Sector-Erase Time: 18 ms (typical)
   – Block-Erase Time: 18 ms (typical)
   – Chip-Erase Time: 70 ms (typical)
   – Word-Program Time: 14 µs (typical)
   – Chip Rewrite Time:
      2 seconds (typical) for SST39LF/VF200A
      4 seconds (typical) for SST39LF/VF400A
      8 seconds (typical) for SST39LF/VF800A
• Automatic Write Timing
   – Internal VPP Generation
• End-of-Write Detection
   – Toggle Bit
   – Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard
   – Flash EEPROM Pinouts and command sets
• Packages Available
   – 48-lead TSOP (12mm x 20mm)
   – 48-ball TFBGA (6mm x 8mm)
   – 48-ball WFBGA (4mm x 6mm) for 4M and 8M
   – 48-bump XFLGA (4mm x 6mm) for 4M and 8M

产品描述 (功能) : 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash

Product Description
The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF200A/400A/800A write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF200A/400A/800A write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16 memories.

Features:
• Organized as 128K x16 / 256K x16 / 512K x16
• Single Voltage Read and Write Operations
   – 3.0-3.6V for SST39LF200A/400A/800A
   – 2.7-3.6V for SST39VF200A/400A/800A
• Superior Reliability
   – Endurance: 100,000 Cycles (typical)
   – Greater than 100 years Data Retention
• Low power Consumption(typical values at 14 MHz)
   – Active Current: 9 mA (typical)
   – Standby Current: 3 µA (typical)
• Sector-Erase Capability
   – Uniform 2 KWord sectors
• Block-Erase Capability
   – Uniform 32 KWord blocks
• Fast Read Access Time
   – 55 ns for SST39LF200A/400A/800A
   – 70 ns for SST39VF200A/400A/800A
• Latched Address and Data
• Fast Erase and Word-Program
   – Sector-Erase Time: 18 ms (typical)
   – Block-Erase Time: 18 ms (typical)
   – Chip-Erase Time: 70 ms (typical)
   – Word-Program Time: 14 µs (typical)
   – Chip Rewrite Time:
      2 seconds (typical) for SST39LF/VF200A
      4 seconds (typical) for SST39LF/VF400A
      8 seconds (typical) for SST39LF/VF800A
• Automatic Write Timing
   – Internal VPP Generation
• End-of-Write Detection
   – Toggle Bit
   – Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard
   – Flash EEPROM Pinouts and command sets
• Packages Available
   – 48-lead TSOP (12mm x 20mm)
   – 48-ball TFBGA (6mm x 8mm)
   – 48-ball WFBGA (4mm x 6mm)
   – 48-bump XFLGA (4mm x 6mm) – 4 and 8Mbit
• All non-Pb (lead-free) devices are RoHS compliant

产品描述 (功能) : 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

PRODUCT DESCRIPTION
The SST39LF512/010/020/040 and SST39VF512/010/020/040 are 64K x8, 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF512/010/020/040 devices write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF512/010/020/040 devices write with a 2.7-3.6V power supply. The devices conform to JEDEC standard pinouts for x8 memories.

产品描述 (功能) : 1 Mbit (128K x8) Page-Mode EEPROM

PRODUCT DESCRIPTION
The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29EE010A/29LE010A/29VE010A write with a single power supply. Internal Erase/Program is transparent to the user. The SST29EE010A/29LE010A/29VE010A conform to JEDEC standard pinouts for bytewide memories.

FEATURES:
• Single Voltage Read and Write Operations
    – 5.0V-only for the SST29EE010A
    – 3.0-3.6V for the SST29LE010A
    – 2.7-3.6V for the SST29VE010A
• Superior Reliability
    – Endurance: 100,000 Cycles (typical)
    – Greater than 100 years Data Retention
• Low power Consumption
    – Active Current: 20 mA (typical) for 5V and 10 mA (typical) for 3.0/2.7V
    – Standby Current: 10 µA (typical)
• Fast Page Write Operation
    – 128 Bytes per Page, 1024 Pages
    – Page Write Cycle: 5 ms (typical)
    – Complete Memory Rewrite: 5 sec (typical)
    – Effective Byte Write Cycle Time: 39 µs (typical)
• Fast Read Access Time
    – 5.0V-only operation: 90 and 120 ns
    – 3.0-3.6V operation: 150 and 200 ns
    – 2.7-3.6V operation: 200 and 250 ns
• Latched Address and Data
• Automatic Write Timing
    – Internal VPP Generation
• End of Write Detection
    – Toggle Bit
    – Data# Polling
• Hardware and Software Data Protection
• TTL I/O Compatibility
• JEDEC Standard
    – Flash EEPROM Pinouts and command sets
• Packages Available
    – 32 Pin PDIP
    – 32-Pin PLCC
    – 32-Pin TSOP (8mm x 20mm & 8mm x 14mm)

产品描述 (功能) : 512 Kbit (64K x8) Page-Mode EEPROM

PRODUCT DESCRIPTION
The SST29EE512 is a 64K x8 CMOS, Page-Write EEPROM manufactured with SST’s proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29EE512 writes with a single power supply. Internal Erase/Program is transparent to the user. The SST29EE512 conforms to JEDEC standard pin assignments for byte-wide memories.

FEATURES:
• Single Voltage Read and Write Operations
    – 4.5-5.5V for SST29EE512
• Superior Reliability
    – Endurance: 100,000 Cycles (typical)
    – Greater than 100 years Data Retention
• Low power Consumption
    – Active Current: 20 mA (typical)
    – Standby Current: 10 µA (typical)
• Fast Page-Write Operation
    – 128 Bytes per Page, 512 Pages
    – Page-Write Cycle: 5 ms (typical)
    – Complete Memory Rewrite: 2.5 sec (typical)
    – Effective Byte-Write Cycle Time: 39 µs (typical)
• Fast Read Access Time
    – 4.5-5.5V operation: 70 ns
• Latched Address and Data
• Automatic Write Timing
    – Internal VPP Generation
• End of Write Detection
    – Toggle Bit
    – Data# Polling
• Hardware and Software Data Protection
• Product Identification can be accessed via
    Software Operation
• TTL I/O Compatibility
• JEDEC Standard
    – Flash EEPROM Pinouts and command sets
• Packages Available
    – 32-lead PLCC
    – 32-lead TSOP (8mm x 20mm)
    – 32-pin PDIP
• All non-Pb (lead-free) devices are RoHS compliant

产品描述 (功能) : SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER

DESCRIPTION
The 3850 group (spec. H) is the 8-bit microcomputer based on the 740 family core technology.
The 3850 group (spec. H) is designed for the household products and office automation equipment and includes serial I/O functions, 8-bit timer, and A-D converter.

FEATURES
● Basic machine-language instructions ...................................... 71
● Minimum instruction execution time .................................. 0.5 µs
                                                       (at 8 MHz oscillation frequency)
● Memory size
   ROM ................................................................... 8K to 32K bytes
   RAM ................................................................. 512 to 1024 bytes
● Programmable input/output ports ............................................ 34
● Interrupts ................................................. 15 sources, 14 vectors
● Timers ............................................................................. 8-bit ✕ 4
● Serial I/O1 .................... 8-bit ✕ 1(UART or Clock-synchronized)
● Serial I/O2 ................................... 8-bit ✕ 1(Clock-synchronized)
● PWM ............................................................................... 8-bit ✕ 1
● A-D converter ............................................... 10-bit ✕ 5 channels
● Watchdog timer ............................................................ 16-bit ✕ 1
● Clock generating circuit..................................... Built-in 2 circuits
   (connect to external ceramic resonator or quartz-crystal oscillator)
   PIN CONFIGURATION (TOP VIEW)
   Fig. 1 M38503MXH-XXXFP/SP pin configuration
power source voltage
   In high-speed mode .................................................. 4.0 to 5.5 V
   (at 8 MHz oscillation frequency)
   In middle-speed mode ............................................... 2.7 to 5.5 V
   (at 8 MHz oscillation frequency)
   In low-speed mode .................................................... 2.7 to 5.5 V
   (at 32 kHz oscillation frequency)
power dissipation
   In high-speed mode ..........................................................34 mW
   (at 8 MHz oscillation frequency, at 5 V power source voltage)
   In low-speed mode ............................................................ 60 µW
   (at 32 kHz oscillation frequency, at 3 V power source voltage)
● Operating temperature range ....................................–20 to 85°C

APPLICATION
   Office automation equipment, FA equipment, Household products, Consumer electronics, etc.

产品描述 (功能) : SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER

DESCRIPTION
The 3850 group is the 8-bit microcomputer based on the 740 family core technology.
The 3850 group is designed for the household products and office automation equipment and includes serial I/O functions, 8-bit timer, and A-D converter.

FEATURES
● Basic machine-language instructions ...................................... 71
● Minimum instruction execution time .................................. 0.5 µs
   (at 8 MHz oscillation frequency)
● Memory size
   ROM ................................................................... 8K to 24K bytes
   RAM ..................................................................... 512 to 640 byte
● Programmable input/output ports ............................................ 34
● Interrupts ................................................. 14 sources, 14 vectors
● Timers ............................................................................. 8-bit ✕ 4
● Serial I/O ....................... 8-bit ✕ 1(UART or Clock-synchronized)
● PWM ............................................................................... 8-bit ✕ 1
● A-D converter ............................................... 10-bit ✕ 5 channels
● Watchdog timer ............................................................ 16-bit ✕ 1
● Clock generating circuit ..................................... Built-in 2 circuits
   (connect to external ceramic resonator or quartz-crystal oscillator)
power source voltage
   In high-speed mode .................................................. 4.0 to 5.5 V
   (at 8 MHz oscillation frequency)
   In high-speed mode .................................................. 2.7 to 5.5 V
   (at 4 MHz oscillation frequency)
   In middle-speed mode ............................................... 2.7 to 5.5 V
   (at 8 MHz oscillation frequency)
   In low-speed mode .................................................... 2.7 to 5.5 V
   (at 32 kHz oscillation frequency)
power dissipation
   In high-speed mode ..........................................................34 mW
   (at 8 MHz oscillation frequency, at 5 V power source voltage)
   In low-speed mode ............................................................ 60 µW
   (at 32 kHz oscillation frequency, at 3 V power source voltage)
● Operating temperature range.................................... –20 to 85°C

APPLICATION
   Office automation equipment, FA equipment, Household products, Consumer electronics, etc.

产品描述 (功能) : 2 Mbit (256K x8) Page-Mode EEPROM

PRODUCT DESCRIPTION
The SST29EE/LE/VE020 are 256K x8 CMOS Page-Write EEPROM manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29EE/LE/VE020 write with a single power supply. Internal Erase/Program is transparent to the user. The SST29EE/LE/VE020 conform to JEDEC standard pinouts for byte-wide memories.
   
FEATURES:
• Single Voltage Read and Write Operations
    – 5.0V-only for SST29EE020
    – 3.0-3.6V for SST29LE020
    – 2.7-3.6V for SST29VE020
• Superior Reliability
    – Endurance: 100,000 Cycles (typical)
    – Greater than 100 years Data Retention
• Low power Consumption
    – Active Current: 20 mA (typical) for 5V and
        10 mA (typical) for 3.0/2.7V
    – Standby Current: 10 µA (typical)
• Fast Page-Write Operation
    – 128 Bytes per Page, 2048 Pages
    – Page-Write Cycle: 5 ms (typical)
    – Complete Memory Rewrite: 10 sec (typical)
    – Effective Byte-Write Cycle Time: 39 µs (typical)
• Fast Read Access Time
    – 5.0V-only operation: 120 and 150 ns
    – 3.0-3.6V operation: 200 and 250 ns
    – 2.7-3.6V operation: 200 and 250 ns
• Latched Address and Data
• Automatic Write Timing
    – Internal VPP Generation
• End of Write Detection
    – Toggle Bit
    – Data# Polling
• Hardware and Software Data Protection
• Product Identification can be accessed via
    Software Operation
• TTL I/O Compatibility
• JEDEC Standard
    – Flash EEPROM Pinouts and command sets
• Packages Available
    – 32-lead PLCC
    – 32-lead TSOP (8mm x 14mm, 8mm x 20mm)
    – 32-pin PDIP
   

12345678910 Next

All Rights Reserved© datasheetbank.com [ 隐私政策 ]